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BFP 840ESD H6327 Datasheet
Datasheet specifications
| Datasheet's name | BFP 840ESD H6327 |
|---|---|
| File size | 66.423 KB |
| File type | |
| Number of pages | 22 |
Download Datasheet BFP 840ESD H6327 |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Infineon Technologies BFP 840ESD H6327
- Transistor Type: -
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 35mA
- Power Dissipation (Pd): 75mW
- Transition Frequency (fT): 80GHz
- DC Current Gain (hFE@Ic,Vce): 260@10mA,1.8V
- Collector Cut-Off Current (Icbo): 400nA
- Collector-Emitter Breakdown Voltage (Vceo): 2.25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
- Package: SOT-343
- Manufacturer: Infineon Technologies
